DocumentCode
540444
Title
Characterization of left-handed traveling-wave field effect transistors
Author
Nakagawa, Shun ; Narahara, Koichi
Author_Institution
Grad. Sch. of Sci. & Eng., Yamagata Univ., Yamagata, Japan
fYear
2010
fDate
7-10 Dec. 2010
Firstpage
2311
Lastpage
2314
Abstract
In this study, we characterized left-handed (LH) traveling-wave field effect transistors (TWFETs) for achieving amplification of LH waves. We performed measurements of a test device and observed that attenuation of LH waves propagating along the electrode lines is successfully compensated for. The potential of LH TWFETs can cover the microwave applications, when implemented on printed-circuit boards or integrated circuits. This paper briefly reviews design criteria of LH TWFETs and describes experimental observations, together with calculated performance of the device.
Keywords
field effect transistors; metamaterials; microwave transistors; LH waves propagation; electrode lines; integrated circuits; left-handed traveling-wave field effect transistors; printed-circuit boards; Attenuation; Capacitance; Inductors; Logic gates; Monitoring; Oscillators; Transistors; Composite right- and left-handed transmission lines; Left-handed waves; Traveling-wave field effect transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
Conference_Location
Yokohama
Print_ISBN
978-1-4244-7590-2
Electronic_ISBN
978-1-902339-22-2
Type
conf
Filename
5728323
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