Title :
Directional couplers from 30 to 140GHz in silicon
Author :
Laemmle, Benjamin ; Schmalz, Klaus ; Scheytt, Christoph ; Koelpin, Alexander ; Weigel, Robert
Author_Institution :
Inst. for Electron. Eng., Univ. of Erlangen-Nuremberg, Erlangen, Germany
Abstract :
In this paper directional couplers with reduced size, by lumped elements, inverted microstrip, and broadside coupled lines at 61, 110, and 122 GHz center frequency and up to 156-GHz bandwidth have been designed. The couplers show an isolation up to 40 dB. Different SiGe BiCMOS technologies with 250-nm and 130-nm feature width and 5 to 7 metal layers have been used. The measurement results have been compared to simulation results and good agreement has been observed.
Keywords :
BiCMOS integrated circuits; directional couplers; silicon compounds; SiGe BiCMOS technologies; bandwidth 156 GHz; broadside coupled lines; directional couplers; frequency 30 GHz to 140 GHz; inverted microstrip; lumped elements; reduced size; silicon; size 130 nm; size 250 nm; Conductors; Directional couplers; Frequency measurement; Metals; Microstrip; Silicon; millimeter wave directional couplers; passive circuits;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-1-4244-7590-2
Electronic_ISBN :
978-1-902339-22-2
