Title :
RF Energy Harvesting System at 2.67 and 5.8GHz
Author :
Arrawatia, Mahima ; Baghini, Maryam Shojaei ; Kumar, Girish
Author_Institution :
Electr. Eng. Dept., Indian Inst. of Technol. Bombay, Mumbai, India
Abstract :
An RF energy harvesting system using a gap coupled microstrip antenna, designed and fabricated for 2.67 and 5.8GHz, is presented in this paper. Gain of 8.6dB and bandwidth of 100MHz has been achieved for antenna at 2.67GHz. A gain of 9dB and bandwidth of 690MHz is obtained for antenna at 5.8GHz. A CMOS rectifier topology designed in UMC 180nm CMOS process and working at 2.6 GHz is also presented. This topology works without any external bias circuit. Rectified voltage of 1.04V at 1MΩ load with 5-stage rectifier is achieved. Measured results of rectenna using Schottky diode at 2.67 and 5.8GHz are also presented.
Keywords :
CMOS integrated circuits; Schottky diodes; energy harvesting; microstrip antennas; rectennas; CMOS rectifier topology; RF energy harvesting system; Schottky diode; UMC CMOS process; bandwidth 100 MHz; bandwidth 690 MHz; frequency 2.67 GHz; frequency 5.8 GHz; gain 8.6 dB; gain 9 dB; gap coupled microstrip antenna; rectenna; resistance 1 Mohm; size 180 nm; voltage 1.04 V; Energy harvesting; Microstrip antennas; Radio frequency; Rectifiers; Schottky diodes; Transistors; CMOS rectifier; RF energy harvesting; microstrip antenna;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-1-4244-7590-2
Electronic_ISBN :
978-1-902339-22-2
