A highly efficient reconfigurable 130nm CMOS-SOI RF power amplifier for multi-radio emitter

Author

Andia, Luis ; Belot, Didier ; Villegas, Martine ; Baudoin, Genevieve

Author_Institution

ST Microelectron. - Innovation & Collaborative Res., Crolles, France

fYear

2010

fDate

7-10 Dec. 2010

Firstpage

1019

Lastpage

1022

Abstract

A class E power amplifier (PA) has been designed and simulated for multi-radio applications in the 1.8 to 5GHz frequency band using a 130 nm CMOS-SOI technology. The PA is a single stage, single ended, self-biased cascode formed by a thin oxide transistor as common source device and a laterally diffused MOS (LDMOS) transistor as common gate. Switched fully integrated high current inductors are used as part of the class E wave shaping network. For the whole frequency band, the PA achieves at least 50% PAE and a gain of more than 14 dB with 6 dBm driving signal.

Keywords

CMOS analogue integrated circuits; power amplifiers; radiofrequency integrated circuits; silicon-on-insulator; CMOS-SOI RF power amplifier; LDMOS; class E power amplifier; class E wave shaping network; common source device; frequency 1.8 GHz to 5 GHz; high current inductors; laterally diffused MOS transistor; multi-radio emitter; size 130 nm; thin oxide transistor; CMOS integrated circuits; Indium gallium arsenide; Logic gates; Radio frequency; Standards; Transistors; WiMAX; Power amplifiers; silicon on insulator technology; switched mode power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2010 Asia-Pacific

Conference_Location

Yokohama

Print_ISBN

978-1-4244-7590-2

Electronic_ISBN

978-1-902339-22-2

Type

conf

Filename

5728566