Title :
5 GHz band low phase noise Si-CMOS oscillator with flip-chip mounted FBAR
Author :
Ta, Tuan Thanh ; Ando, Kei ; Tanifuji, Shoichi ; Kameda, Suguru ; Suematsu, Noriharu ; Takagi, Tadashi ; Tsubouchi, Kazuo
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
Abstract :
Low phase noise 5 GHz oscillator is designed with 90 nm silicon complementary metal oxide semiconductor (Si-CMOS) process. To achieve low phase noise, we used high Q value film bulk acoustic resonator (FBAR) instead of conventional LC resonant circuit. FBAR was mounted by using stud bump bonding instead of wire bonding to reduce parasitic inductance. This FBAR oscillator has phase noise of lower than -108dBc/Hz at 100 kHz offset.
Keywords :
CMOS analogue integrated circuits; acoustic resonators; elemental semiconductors; field effect MMIC; flip-chip devices; lead bonding; microwave oscillators; phase noise; silicon; Si; Si-CMOS oscillator; bandwidth 5 GHz; bump bonding; film bulk acoustic resonator; flip-chip mounted FBAR; low phase noise; silicon complementary metal oxide semiconductor process; size 90 nm; wire bonding; Bonding; Film bulk acoustic resonators; Frequency measurement; Phase noise; Silicon; Wire; 5 GHz; 90 nm silicon complementary metal oxide semiconductor (Si-CMOS); film bulk acoustic resonator (FBAR); low phase noise; oscillator;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-1-4244-7590-2
Electronic_ISBN :
978-1-902339-22-2
