Title :
A 5.9 GHz–8.5 GHz 20 Watts GaN HEMT
Author :
Mizuno, Shinya ; Yamamoto, Hiroshi ; Yamamoto, Takashi ; Nishihara, Makoto ; Sano, Seigo
Author_Institution :
Transm. Devices R&D Labs., Sumitomo Electr. Ind., Ltd., Yamanashi, Japan
Abstract :
A 20 Watts GaN high electron mobility transistor (HEMT) has been developed for C-band radio applications. The device consists of a single die of 0.35 μm-gate GaN HEMT of 12 mm gate periphery together with input and output 2-stage impedance transformers into a conventional package. The developed GaN HEMT provides 20 watts output power and 40% power added efficiency over 5.9 GHz to 8.5 GHz with small signal gain of 13.5 dB.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; impedance convertors; microwave field effect transistors; wide band gap semiconductors; C-band radio; GaN; GaN HEMT; efficiency 40 percent; frequency 5.9 GHz to 8.5 GHz; gain 13.5 dB; power 20 W; power added efficiency; size 0.35 mum; size 12 mm; small signal gain; stage impedance transformers; Bandwidth; Gain; Gallium arsenide; Gallium nitride; HEMTs; Impedance; C-band; GaN HEMT; high efficiency; power amplifiers;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-1-4244-7590-2
Electronic_ISBN :
978-1-902339-22-2
