Title :
A high dynamic range wide-band switched gain controlled LNA in 0.18 µm CMOS
Author :
Park, Bonghyuk ; Jung, Jaeho
Author_Institution :
ETRI, Daejeon, South Korea
Abstract :
A high dynamic range, wide-band switched gain LNA has been developed by using CMOS 0.18-μm technology. The proposed low noise amplifier (LNA) consists of cascode feedback in the first stage and cascode topology in the second stage. The frequency response of 2.0 - 3.5 GHz is demonstrated in this work. In high gain mode, measured results show a noise figure of 2.6 - 2.96 dB, gain of 23.8 - 26.2 dB, and input P1dB of -18.0 dBm with 10.6 mA DC current. In mid gain mode, the LNA achieves 4.27 - 6.57 dB noise figure and 20.2 - 21.5 dB gain with 11.0 mA current consumption. In low gain mode, 6.7 - 8.58 dB noise figure, 10.2 - 12.5 dB gain, and -10 dBm input P1dB with 11.0 mA current are realized. The switched feedback resistor affects to make a high dynamic range.
Keywords :
CMOS analogue integrated circuits; low noise amplifiers; resistors; CMOS; cascode feedback; cascode topology; current 11 mA; frequency 2.0 GHz to 3.5 GHz; gain 10.2 dB to 12.5 dB; gain 20.2 dB to 21.5 dB; low noise amplifier; noise figure 2.6 dB to 2.96 dB; noise figure 6.7 dB to 8.58 dB; size 0.18 mum; switched feedback resistor; CMOS integrated circuits; Dynamic range; Gain; Noise figure; Radio frequency; Switching circuits; Wireless communication; CMOS; dynamic range; high gain mode; low gain mode; low noise amplifier (LNA); mid gain mode; wide-band;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-1-4244-7590-2
Electronic_ISBN :
978-1-902339-22-2
