Title :
Highly linear and efficient unsymmetrical inverted Doherty power amplifier employing phase compensation
Author :
Kam, Sang-Ho ; Lee, Mun-Woo ; Lee, Yong-Sub ; Jeong, Yoon-Ha
Author_Institution :
Dept. of Electron. & Electical Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
Abstract :
This paper reports highly linear and efficient unsymmetrical inverted Doherty power amplifier (IDPA) employing the phase compensation. By inserting additional offset lines at the input path of the carrier cell, the phase variation between the carrier and peaking paths is compensated. For verifications, the unsymmetrical IDPA is implemented with 30-W Si LDMOSFETs and tested using a continuous wave (CW) and a one-carrier wideband code division multiple access (WCDMA) signals at 2.14 GHz. For a CW signal, by inserting additional input offset lines at the carrier cell path, the results of the output power, gain, and the drain efficiency at the saturation region increase slightly. For a one-carrier WCDMA signal, the drain efficiency of 27.9 % is achieved and the adjacent channel leakage ratios (ACLRs) at ±5-MHz offsets are below -47 dBc at a 10-dB back-off power (BOP). After the DPD linearization, the ACLRs of below -57 dBc at ±5-MHz offsets are obtained.
Keywords :
MOSFET; UHF power amplifiers; code division multiple access; elemental semiconductors; silicon; ACLR; DPD linearization; IDPA; LDMOSFET; Si; adjacent channel leakage ratios; carrier cell path; continuous wave WCDMA signal; frequency 2.14 GHz; one-carrier WCDMA signal; phase compensation; power 30 W; unsymmetrical inverted Doherty power amplifier; wideband code division multiple access signal; Gain; Silicon; Digital predistortion (DPD); efficiency; inverted Doherty power amplifier; linearity; offset lines;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-1-4244-7590-2
Electronic_ISBN :
978-1-902339-22-2