Implementation of new SP6T switch achieving high quality and small size at same time

SP6T switch achieving low loss, high isolation and small size at same time was developed. For the excellent RF performance, optimization of p-HEMT unit cell which improves the trade-off between On/Off states, and employment of optimal additional passive components was introduced. To achieve high isolation, specially, capacitors of large size was used in switch, size increase by these components was considered by common voltage control and back via process leading increase of size efficiency. The entire layout was designed as suitable structure for miniaturization and high integration in RF front-end. Chip size was below 1 mm², and stable performance was confirmed in covering frequency.