DocumentCode
540783
Title
100 watt HMIC asymmetric PIN diode switch
Author
Rozbicki, A. ; Boles, T. ; Brogle, J. ; Giacchino, R.
Author_Institution
M/A-COM Technol. Solutions, Lowell, MA, USA
fYear
2010
fDate
7-10 Dec. 2010
Firstpage
492
Lastpage
495
Abstract
Miniaturization, speed, high linearity, and high power are the requirements imposed on high frequency integrated circuits by the latest system requirements. The results of intensive EM HFSS and thermal analysis have determined that the anode shape of a PIN diode used in an SPDT switch is critical in achieving higher RF power handling performance at 2 GHz, a frequency where the diode dimensions are a small fraction of a wavelength. It has been demonstrated that utilizing a long and curved anode can significantly increase power handling without sacrificing size and performance. The results of this analysis were used to develop a 100W CW, 2GHz single pole double throw asymmetric MMIC switch with a die size of 1.55mm2 using Heterolithic Microwave Integrated Circuit (HMIC) M/A-COM patented technology.
Keywords
MMIC; UHF diodes; anodes; microwave diodes; microwave switches; p-i-n diodes; thermal analysis; EM HFSS; HMIC; HMIC asymmetric PIN diode switch; M-A-COM patented technology; SPDT switch; anode shape; curved anode; frequency 2 GHz; heterolithic microwave integrated circuit; high frequency integrated circuits; power 100 W; single pole double throw asymmetric MMIC switch; thermal analysis; Anodes; Insertion loss; Microwave integrated circuits; PIN photodiodes; Semiconductor diodes; Silicon; Switches; MIMICs; microwave switches; p-i-n diodes; semiconductor diode switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
Conference_Location
Yokohama
Print_ISBN
978-1-4244-7590-2
Electronic_ISBN
978-1-902339-22-2
Type
conf
Filename
5728667
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