• DocumentCode
    540783
  • Title

    100 watt HMIC asymmetric PIN diode switch

  • Author

    Rozbicki, A. ; Boles, T. ; Brogle, J. ; Giacchino, R.

  • Author_Institution
    M/A-COM Technol. Solutions, Lowell, MA, USA
  • fYear
    2010
  • fDate
    7-10 Dec. 2010
  • Firstpage
    492
  • Lastpage
    495
  • Abstract
    Miniaturization, speed, high linearity, and high power are the requirements imposed on high frequency integrated circuits by the latest system requirements. The results of intensive EM HFSS and thermal analysis have determined that the anode shape of a PIN diode used in an SPDT switch is critical in achieving higher RF power handling performance at 2 GHz, a frequency where the diode dimensions are a small fraction of a wavelength. It has been demonstrated that utilizing a long and curved anode can significantly increase power handling without sacrificing size and performance. The results of this analysis were used to develop a 100W CW, 2GHz single pole double throw asymmetric MMIC switch with a die size of 1.55mm2 using Heterolithic Microwave Integrated Circuit (HMIC) M/A-COM patented technology.
  • Keywords
    MMIC; UHF diodes; anodes; microwave diodes; microwave switches; p-i-n diodes; thermal analysis; EM HFSS; HMIC; HMIC asymmetric PIN diode switch; M-A-COM patented technology; SPDT switch; anode shape; curved anode; frequency 2 GHz; heterolithic microwave integrated circuit; high frequency integrated circuits; power 100 W; single pole double throw asymmetric MMIC switch; thermal analysis; Anodes; Insertion loss; Microwave integrated circuits; PIN photodiodes; Semiconductor diodes; Silicon; Switches; MIMICs; microwave switches; p-i-n diodes; semiconductor diode switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
  • Conference_Location
    Yokohama
  • Print_ISBN
    978-1-4244-7590-2
  • Electronic_ISBN
    978-1-902339-22-2
  • Type

    conf

  • Filename
    5728667