A Ka-band receiver front end module

Author

Chen, Jixin ; Yan, Pinpin ; Hong, Wei

Author_Institution

State Key Lab. of Millimeter Waves, Southeast Univ., Nanjing, China

fYear

2010

fDate

7-10 Dec. 2010

Firstpage

535

Lastpage

537

Abstract

A Ka-band receiver front end module is designed and implemented by using MMIC chipset fabricated with GaAs pHEMT process. The MMIC chipset include a millimeter-wave monolithic low noise amplifier, a sub-harmonic mixer and a distributed amplifier designed with OMMIC ED02AH and WIN PP15-20 processes. A substrate integrated waveguides (SIW) filter is also designed to reject image signals of receiver. The measured conversion gain is more than 15dB at the frequency range from 35.3 to 37GHz. This receiver works at LO frequency of 17.5GHz and IF frequency from 0.5 to 1.5GHz.

Keywords

MMIC amplifiers; MMIC mixers; distributed amplifiers; gallium arsenide; microwave receivers; substrate integrated waveguides; GaAs; GaAs pHEMT process; Ka band receiver front end module; LO frequency; MMIC chipset; distributed amplifier; frequency 0.5 GHz to 37 GHz; image signals; millimeter wave monolithic low noise amplifier; substrate integrated waveguide filter; Frequency measurement; Gain; Millimeter wave communication; Mixers; PHEMTs; Receivers; Receiver front end; amplifier; millimeter-wave; mixer;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2010 Asia-Pacific

Conference_Location

Yokohama

Print_ISBN

978-1-4244-7590-2

Electronic_ISBN

978-1-902339-22-2

Type

conf

Filename

5728678