DocumentCode :
540900
Title :
Field Effect Transistors for Terahertz detection and emission
Author :
Knap, Wojciech ; Klimenko, O. ; Schuster, F. ; Dyakonova, N. ; Coquillat, Dominique ; Teppe, F. ; Giffard, B.
Author_Institution :
Univ. Montpellier 2, Montpellier, France
fYear :
2010
fDate :
20-23 Sept. 2010
Firstpage :
1
Lastpage :
4
Abstract :
We review a few recent results concerning the physics and applications of Field Effect Transistors ( FETs) as Terahertz detectors and emitters. Particularly we stress results concerning dependance of THz detection and emission on high/quantizing magnetic fields and the geometry of the transistor channel.
Keywords :
field effect transistors; terahertz wave detectors; FET; THz detection; field effect transistor; high-quantizing magnetic field; terahertz detection; terahertz emission; transistor channel geometry; Gallium nitride; Magnetic resonance; Magnetic resonance imaging; Magnetomechanical effects;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ICECom, 2010 Conference Proceedings
Conference_Location :
Dubrovnik
Print_ISBN :
978-1-61284-998-0
Electronic_ISBN :
978-9-5360-3758-2
Type :
conf
Filename :
5729761
Link To Document :
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