DocumentCode
540975
Title
1200V 6A SiC BJTs with very low VCESAT and fast switching
Author
Lindgren, Anders ; Domeij, Martin
Author_Institution
Transic, Kista, Sweden
fYear
2010
fDate
16-18 March 2010
Firstpage
1
Lastpage
5
Abstract
This paper reports measurements and simulations made on 1200V 6A Silicon carbide (SiC) bipolar junction transistors. A SPICE model for the transistor has been developed and verified by static and dynamic measurements. Fast switching and low on state losses have been measured and SPICE simulated on the component level. To further describe the impact on a systems level a simplified boost converter has been simulated with regards to power losses and cooling.
Keywords
bipolar transistors; convertors; silicon compounds; BJT; SPICE model; SiC; bipolar junction transistors; current 6 A; dynamic measurements; fast switching; power losses; simplified boost converter; static measurements; voltage 1200 V; Current measurement; Insulated gate bipolar transistors; Integrated circuit modeling; Silicon carbide; Temperature measurement; Transistors; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Power Electronics Systems (CIPS), 2010 6th International Conference on
Conference_Location
Nuremberg
Print_ISBN
978-1-61284-814-3
Type
conf
Filename
5730689
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