GaN-Based High-Voltage Light-Emitting Diodes With SU-8 Passivation

Author

Shuguang Li ; Kin-Tak Lam ; Wei-Chih Huang ; Shoou-Jinn Chang

Author_Institution

Coll. of Sci., China Univ. of Pet. (East China), Qingdao, China

Volume

11

Issue

4

fYear

2015

fDate

Apr-15

Firstpage

374

Lastpage

377

Abstract

The authors propose the use of SU-8 to passivate the isolation trenches of GaN-based high-voltage light-emitting diodes (HV-LEDs). Compared with the HV-LED chips prepared with pure SU-8 passivation, it was found that we could increase the production yield from ≤ 35% to ≥ 88% using properly diluted SU-8 passivation layer. It was also found that we could reduce the passivation layer thickness by diluting SU-8 with a ratio of 5:2. Furthermore, it was found that the properly diluted SU-8 could provide smooth surface, minimized crack formation, and thus larger production yield.

Keywords

III-V semiconductors; cracks; gallium compounds; integrated optoelectronics; light emitting diodes; passivation; photoresists; wide band gap semiconductors; GaN; RV-LED; SU-8 passivation; high-voltage light emitting diodes; isolation trenches; minimized crack formation; passivation layer thickness; production yield; smooth surface; Educational institutions; Light emitting diodes; Passivation; Photonics; Production; Semiconductor device measurement; Voltage measurement; Crack; GaN; HV-LEDs; SU-8; production yield;

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2015.2401006

Filename

7031901