Threshold Selector With High Selectivity and Steep Slope for Cross-Point Memory Array

Author

Jeonghwan Song ; Jiyong Woo ; Prakash, Amit ; Daeseok Lee ; Hyunsang Hwang

Author_Institution

Dept. of Mater. Sci. & Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea

Volume

36

Issue

7

fYear

2015

fDate

Jul-15

Firstpage

681

Lastpage

683

Abstract

In this letter, we demonstrated a new type of threshold selector with excellent electrical characteristics for cross-point memory array. The proposed Ag/TiO₂-based threshold selector device showed high selectivity (~10⁷) and steep slope (<;5 mV/decade). The observed threshold switching in programmable metallization cell device occurred due to the spontaneous rupturing of silver (Ag) filament. The Ag ionization to minimize the steric repulsion between Ag and surrounding TiO₂ electrolyte was the main origin of the spontaneous rupture.

Keywords

flash memories; integrated circuit metallisation; silver; threshold logic; Ag-TiO₂; cross-point memory array; programmable metallization cell device; silver ionization; spontaneous rupture; steric repulsion; threshold selector; threshold switching; Arrays; Metallization; Performance evaluation; Resistance; Switches; Three-dimensional displays; Threshold voltage; PMC; Selector device; cross-point memory array; spontaneous rupture; threshold switching;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2430332

Filename

7102702