DocumentCode :
542422
Title :
Circuit models for PN integrated varactors
Author :
Marrero-Martín, M. ; García, J. ; González, B. ; Hernández, A.
Author_Institution :
Dept. of Electron. Eng. & Control, Univ. de Las Palmas de Gran Canaria, Las Palmas de Gran Canaria, Spain
fYear :
2011
fDate :
8-11 Feb. 2011
Firstpage :
1
Lastpage :
4
Abstract :
This paper compares different circuit models describing the performance of integrated varactors, which are designed, manufactured, measured and simulated with a 0.35 μm silicon standard technology. Three models are presented, named: simple, capacitive-inductive and physical. Their differences consist on the circuit elements used, capacitances, inductances and resistances, and the way they are connected. The more elaborated one, the physical model, contains a large number of components and, therefore, produces a better approximation of the varactor response. All models are accurate and scalable over a wide range of layout dimensions and can be used to design radio-frequency integrated circuits, RFICs.
Keywords :
BiCMOS integrated circuits; p-n junctions; varactors; BiCMOS design; PN integrated varactors; PN junction; RFIC; capacitive-inductive model; circuit models; physical model; radio-frequency integrated circuit design; silicon standard technology; size 0.35 mum; Capacitance; Frequency measurement; Integrated circuit modeling; Junctions; Resonant frequency; Substrates; Varactors; PN junction; circuit model; integrated varactor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4244-7863-7
Type :
conf
DOI :
10.1109/SCED.2011.5744242
Filename :
5744242
Link To Document :
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