• DocumentCode
    54244
  • Title

    Adaptive Paired Page Prebackup Scheme for MLC NAND Flash Memory

  • Author

    Jaeil Lee ; Dongkun Shin

  • Author_Institution
    Samsung Electron., Hwasung, South Korea
  • Volume
    33
  • Issue
    7
  • fYear
    2014
  • fDate
    Jul-14
  • Firstpage
    1110
  • Lastpage
    1114
  • Abstract
    Multilevel cell (MLC) NAND flash memory is more cost effective compared with single-level cell NAND flash memory as it can store two or more bits in a memory cell. However, in MLC flash memory, a programming operation can corrupt the paired page under abnormal termination. In order to solve the paired page problem, a backup scheme is generally used, which inevitably causes performance degradation and shortens the lifespan of flash memory. In this paper, we propose a more efficient paired page prebackup scheme for MLC flash memory. It adaptively exploits interleaving, copyback operations, and parity data to reduce the prebackup overhead. In experiments, the proposed scheme reduced the backup overhead by up to 78%.
  • Keywords
    NAND circuits; flash memories; MLC NAND flash memory; adaptive paired page prebackup scheme; memory cell; multilevel cell NAND flash memory; parity data; performance degradation; prebackup overhead reduction; single-level cell NAND flash memory; Ash; Flash memories; Memory management; Programming; Smart phones; Writing; Adaptive LSB prebackup; flash translation layer; multilevel cell (MLC); nand flash memory; storage;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/TCAD.2014.2309857
  • Filename
    6835148