DocumentCode
54244
Title
Adaptive Paired Page Prebackup Scheme for MLC NAND Flash Memory
Author
Jaeil Lee ; Dongkun Shin
Author_Institution
Samsung Electron., Hwasung, South Korea
Volume
33
Issue
7
fYear
2014
fDate
Jul-14
Firstpage
1110
Lastpage
1114
Abstract
Multilevel cell (MLC) NAND flash memory is more cost effective compared with single-level cell NAND flash memory as it can store two or more bits in a memory cell. However, in MLC flash memory, a programming operation can corrupt the paired page under abnormal termination. In order to solve the paired page problem, a backup scheme is generally used, which inevitably causes performance degradation and shortens the lifespan of flash memory. In this paper, we propose a more efficient paired page prebackup scheme for MLC flash memory. It adaptively exploits interleaving, copyback operations, and parity data to reduce the prebackup overhead. In experiments, the proposed scheme reduced the backup overhead by up to 78%.
Keywords
NAND circuits; flash memories; MLC NAND flash memory; adaptive paired page prebackup scheme; memory cell; multilevel cell NAND flash memory; parity data; performance degradation; prebackup overhead reduction; single-level cell NAND flash memory; Ash; Flash memories; Memory management; Programming; Smart phones; Writing; Adaptive LSB prebackup; flash translation layer; multilevel cell (MLC); nand flash memory; storage;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/TCAD.2014.2309857
Filename
6835148
Link To Document