Title :
Comparison of different MOS-triggered SCR structures for on-chip ESD protection
Author :
Ma, Fei ; Han, Yan ; Song, Bo ; Dong, Shurong ; Miao, Meng
Author_Institution :
Dept. ISEE, Zhejiang Univ., Hangzhou, China
Abstract :
Three types of MOS-triggered SCR structures: Merged MOS-triggered SCR, compact MOS-triggered SCR and boundary-MOS-triggered SCR devices have been fabricated and compared in 0.13 μm CMOS process for on-chip ESD protection. TLP testing results show boundary-MOS-triggered SCR structures can achieve adjustable and lower switching voltage, smaller turn-on resistance, faster turn-on speed, the best ESD robustness and sufficient latch-up immunity compared with other MOS-triggered SCRs.
Keywords :
CMOS integrated circuits; MOS-controlled thyristors; electrostatic discharge; semiconductor device testing; thyristors; trigger circuits; CMOS process; MOS-triggered SCR structures; TLP testing; latch-up immunity; low switching voltage; on-chip ESD protection; size 0.13 mum; CMOS process; Clamps; Electrostatic discharge; Layout; Logic gates; Thyristors; Voltage measurement; Electrostatic discharge(ESD); Silicon-controlled rectifier(SCR); Transmission line pulse(TLP);
Conference_Titel :
Computer Research and Development (ICCRD), 2011 3rd International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-61284-839-6
DOI :
10.1109/ICCRD.2011.5764207
