Surface potential based model for amorphous IGZO thin film transistors

Author

He, Hongyu ; Tang, Huiling ; Zheng, Xueren

Author_Institution

Fac. of Phys. & Optoelectron. Eng., Guangdong Univ. of Technol., Guangzhou, China

Volume

3

fYear

2011

fDate

11-13 March 2011

Firstpage

350

Lastpage

352

Abstract

An analytical dc model is presented for amorphous In-Ga-Zn-Oxide (a-IGZO) thin film transistors on the basis of surface potential calculation by Lambert W equation, assuming an exponential trap states density within the bandgap. Charge sheet approximation is utilized to derive the trapped and free charges. The model results are compared with experimental data and a good agreement is achieved.

Keywords

II-VI semiconductors; amorphous semiconductors; gallium compounds; indium compounds; semiconductor device models; surface potential; thin film transistors; wide band gap semiconductors; zinc compounds; InGaZnO; Lambert W equation; amorphous IGZO thin film transistors; analytical DC model; charge sheet approximation; exponential trap state density; surface potential based model; Approximation methods; Data models; Electric potential; Integrated circuit modeling; Logic gates; Mathematical model; Thin film transistors; amorphous In-Ga-Zn-Oxide (a-IGZO); surface potential; thin film transistors(TFTs); trap states;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer Research and Development (ICCRD), 2011 3rd International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-61284-839-6

Type

conf

DOI

10.1109/ICCRD.2011.5764211

Filename

5764211