• DocumentCode
    545472
  • Title

    An enhanced TLP system for ESD characterization in semiconductor technologies

  • Author

    Chen, Guang ; Gao, Le ; Zhang, Ning ; Liu, Shaolong ; Cheng, Yuhua

  • Author_Institution
    Shanghai Res. Inst. of Microelectron. (SHRIME), Peking Univ., Beijing, China
  • Volume
    3
  • fYear
    2011
  • fDate
    11-13 March 2011
  • Firstpage
    402
  • Lastpage
    406
  • Abstract
    Standard transmission line pulse (TLP) test system has been studied for evaluating ESD performance of semiconductor devices accurately. The impedance matching techniques in the standard transmission line pulse (TLP) test system can effectively eliminate the pulse waveform distortion, but increases the power attenuation. Thus the force imposed to the device under test is far less than the energy TLP delivered. Most of the researchers tried to solve the problem by promoting the charging voltage to obtain high-current discharge source. In this paper, parallel transmission line (PTL) technique is presented, which discharges the high transient current pulse with nearly doubled energies to enhance the cost-effectiveness of the system. In addition, improved attenuator and filter with perfect matching characteristic are designed in order to adapt to the new system.
  • Keywords
    attenuators; electrostatic discharge; filters; impedance matching; semiconductor device testing; transient analysis; transmission lines; ESD characterization; attenuator; enhanced TLP system; filter; high-current discharge source; impedance matching techniques; parallel transmission line technique; semiconductor devices; standard transmission line pulse test system; transient current pulse; Attenuators; Electrostatic discharge; Impedance; Low pass filters; Microwave filters; Power transmission lines; Testing; ESD; TEST; TLP;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer Research and Development (ICCRD), 2011 3rd International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-61284-839-6
  • Type

    conf

  • DOI
    10.1109/ICCRD.2011.5764224
  • Filename
    5764224