A wideband integrated Gilbert cell mixer with an inductor resonator using 0.5um GaAs enhancement-mode pHEMT technology

Author

Liu, Chi-Wei ; Fu, Jeffrey S. ; Chiu, Hsien-Chin

Author_Institution

Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan

fYear

2011

fDate

20-22 April 2011

Firstpage

1

Lastpage

2

Abstract

A fully integrated active Gilbert cell mixer with inductor resonator was proposed in this paper. The proposed circuit was designed at 12 GHz with bandwidth from 5 to 20 GHz and fabricated in a 0.5-μm pHEMT process. An extra inductor was added to enhance the conversion gain and improve the noise figure. The “current bleeding” technique was also inserted in the Gilbert cell mixer to boost the conversion gain, meanwhile, improving the noise level. The highest conversion gain of 11 dB can be achieved in the designed circuit under LO input power of 4.5 dBm. Both RF-IF and LO-IF isolations were better than 30dB. The third order intercept point input power, IIP3, achieved as high as 6 dBm. Total consumption is 59.6 mW. The total chip area is 1.15 * 0.92 mm².

Keywords

III-V semiconductors; gallium arsenide; high electron mobility transistors; inductors; microwave mixers; microwave resonators; GaAs; GaAs enhancement-mode pHEMT technology; LO-IF isolation; RF-IF isolation; active Gilbert cell mixer; bandwidth 5 GHz to 20 GHz; current bleeding; frequency 12 GHz; inductor resonator; power 59.6 mW; size 0.5 mum; third order intercept point input power; 1f noise; Hemorrhaging; Impedance matching; Inductors; Mixers; Radio frequency; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (CJMW), 2011 China-Japan Joint

Conference_Location

Hangzhou

Print_ISBN

978-1-4577-0625-7

Electronic_ISBN

978-7-308-08555-7

Type

conf

Filename

5774020