• DocumentCode
    545767
  • Title

    A 2.4 GHz and 5.8 GHz tunable low-noise amplifier using PIN diode

  • Author

    Hou, Dezhou ; Hong, Wei ; Wu, Ke

  • Author_Institution
    State Key Lab. of Millimeter Waves, Southeast Univ., Nanjing, China
  • fYear
    2011
  • fDate
    20-22 April 2011
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this paper, a tunable low-noise amplifier (LNA) is developed. The operation bands of the LNA can be switched between 2.4 GHz and 5.8 GHz by controlling a PIN diode in the output matching network. At the forward bias state of the PIN diode, the LNA operates at 2.4 GHz, the measured gain is 16 dB and the noise figure is below 0.6 dB within a bandwidth of 100 MHz. At the reverse bias state of the PIN diode, the LNA works at 5.8 GHz, the measured gain is 9.7 dB and the noise figure is below 1.7 dB within a bandwidth of 200 MHz. Compared with the wideband LNA covering 2.4GHz and 5.8GHz bands, efficient improvement in gain and noise figure is observed.
  • Keywords
    low noise amplifiers; microwave amplifiers; p-i-n diodes; LNA; PIN diode; bandwidth 100 MHz; bandwidth 200 MHz; frequency 2.4 GHz; frequency 5.8 GHz; gain 16 dB; gain 9.7 dB; tunable low-noise amplifier; Frequency measurement; Gain; Gain measurement; Impedance matching; Noise figure; PIN photodiodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference Proceedings (CJMW), 2011 China-Japan Joint
  • Conference_Location
    Hangzhou
  • Print_ISBN
    978-1-4577-0625-7
  • Electronic_ISBN
    978-7-308-08555-7
  • Type

    conf

  • Filename
    5774025