DocumentCode
545807
Title
An improved nonlinear model for InP/InGaAs HBTs
Author
Gao, Jianjun ; Cheng, Jiali ; Li, Shoulin ; Wang, Huang ; Han, Bo
Author_Institution
Sch. of Inf. Sci. & Technol., East China Normal Univ., Shanghai, China
fYear
2011
fDate
20-22 April 2011
Firstpage
1
Lastpage
3
Abstract
An empirical DC to high frequency equivalent circuit model for InP HBTs is presented in this paper. The model takes into account the dc soft-knee effect, bias-dependent extrinsic and intrinsic base-collector capacitances. This modeling methodology is successfully applied to predict dc, small-signal S-parameters for an InP/InGaAs HBT.
Keywords
III-V semiconductors; S-parameters; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; DC small-signal S-parameter prediction; DC soft-knee effect; HBT; InP-InGaAs; bias-dependent extrinsic capacitance; high frequency equivalent circuit model; improved nonlinear model; intrinsic base-collector capacitances; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Integrated circuit modeling; Predictive models; Resistance; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference Proceedings (CJMW), 2011 China-Japan Joint
Conference_Location
Hangzhou
Print_ISBN
978-1-4577-0625-7
Electronic_ISBN
978-7-308-08555-7
Type
conf
Filename
5774065
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