DocumentCode
54691
Title
AlN/SiO2/Si3N4/Si(100)-Based CMOS Compatible Surface Acoustic Wave Filter With −12.8-dB Minimum Insertion Loss
Author
Kaletta, Udo Christian ; Wipf, Christian ; Fraschke, Mirko ; Wolansky, Dirk ; Schubert, Markus Andreas ; Schroeder, Thomas ; Wenger, Christian
Author_Institution
Leibniz Inst. for Innovative Microelectron., Frankfurt (Oder), Germany
Volume
62
Issue
3
fYear
2015
fDate
Mar-15
Firstpage
764
Lastpage
768
Abstract
A CMOS compatible AlN/SiO2/Si3N4/Si(100) surface acoustic wave (SAW) device has been fabricated and will be compared with standard AlN/SiO2-based devices. The presented filter demonstrates high potential for CMOS integrated high-frequency SAW devices. The filter insertion loss could be improved to -12.8 dB. The device exhibits high crosstalk suppression of -50 dB on a standard Si-substrate (10 Ωcm). X-ray diffraction, (scanning) transmission electron microscopy, and energy dispersive X-ray spectroscopy studies correlate the signal quality with c -axis orientation of aluminum nitride films on interdigitated transducer finger electrodes. Finite-element method simulations are in good agreement with the electric measurements and show typical Rayleigh particle displacement.
Keywords
CMOS integrated circuits; III-V semiconductors; X-ray chemical analysis; X-ray diffraction; aluminium compounds; electrodes; elemental semiconductors; finite element analysis; interdigital transducers; scanning electron microscopy; silicon; silicon compounds; surface acoustic wave filters; transmission electron microscopy; wide band gap semiconductors; AlN-SiO2-Si3N4-Si; AlN/SiO2/Si3N4/Si(100) SAW device; CMOS compatible surface acoustic wave filter; Rayleigh particle displacement; Si; X-ray diffraction; aluminum nitride films; c-axis orientation; crosstalk suppression; energy dispersive X-ray spectroscopy; finite-element method; interdigitated transducer finger electrodes; minimum insertion loss; scanning electron microscopy; signal quality; standard Si-substrate; transmission electron microscopy; CMOS integrated circuits; Electrodes; III-V semiconductor materials; Metals; Surface acoustic waves; Aluminum nitride (AlN); CMOS; Si(100); finite-element method (FEM); insertion loss (IL); surface acoustic wave (SAW); surface acoustic wave (SAW).;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2015.2395443
Filename
7031958
Link To Document