• DocumentCode
    547033
  • Title

    Intensity dependence of optically-induced injection currents in semiconductor quantum wells

  • Author

    Pochwala, Michal ; Duc, Huynh Thanh ; Förstner, Jens ; Meier, Torsten

  • Author_Institution
    Dept. of Phys., Univ. of Paderborn, Paderborn, Germany
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The intensity dependence of optically-induced injection currents in semiconductor quantum wells is investigated numerically. Oscillatory behavior of the electron charge current transients as function of intensity and time is predicted and explained.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor quantum wells; transients; GaAs-AlxGa1-xAs; electron charge current transients; intensity dependence; optically-induced injection currents; oscillatory behavior; semiconductor quantum wells; Equations; Gallium arsenide; Mathematical model; Nonlinear optics; Optical polarization; Optical pulses; Ultrafast optics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5951378
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=547033