• DocumentCode
    547072
  • Title

    Exciton-photon coupling of InAs quantum dot in GaAs photonic crystal mode-gap nanocavities

  • Author

    Gao, Jie ; Combrie, Sylvain ; Liang, Baolai ; Lehoucq, Gaelle ; Huffaker, Diana L. ; Englund, Dirk ; De Rossi, Alfredo ; Wong, Chee Wei

  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We demonstrate single quantum dot coupled to photonic crystal mode-gap cavities with high Q/V ratio. Polarization and temperature dependent photoluminescence are examined. Predominating polarization is observed for quantum dot coupled to cavity mode.
  • Keywords
    III-V semiconductors; excitons; gallium arsenide; indium compounds; nanophotonics; photoluminescence; photonic crystals; semiconductor quantum dots; GaAs photonic crystal mode-gap nanocavities; InAs quantum dot; InAs-GaAs; Q/V ratio; cavity mode; exciton-photon coupling; predominating polarization; single quantum dot; temperature dependent photoluminescence; Cavity resonators; Couplings; Excitons; Gallium arsenide; Photonic crystals; Photonics; Quantum dots;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5951621