• DocumentCode
    54731
  • Title

    Quasi-Ideal Memory System

  • Author

    Junwei Sun ; Yi Shen

  • Author_Institution
    Sch. of Autom., Huazhong Univ. of Sci. & Technol., Wuhan, China
  • Volume
    45
  • Issue
    7
  • fYear
    2015
  • fDate
    Jul-15
  • Firstpage
    1353
  • Lastpage
    1362
  • Abstract
    The definition for ideal memory system is so strict that some physical elements cannot exist in the real world. In this paper, an ideal memory system can be extended to generate 15 different kinds of quasi-ideal memory systems, which are included in memory systems as its special cases and are different from ideal memory system. For a system to be a quasi-ideal memory system, it should show three unique fingerprints: 1) the pinched hysteretic loop of a quasi-ideal memory system must be odd symmetrical in the plane; 2) the pinched hysteretic loop of a quasi-ideal memory system must be “self-crossing”; and 3) the slope of tangent line for the pinched hysteresis loop must be strictly monotone in a given period.
  • Keywords
    hysteresis; memristors; memristor; physical elements; pinched hysteretic loop; quasiideal memory system; Educational institutions; Equations; Hysteresis; Mathematical model; Memristors; Time-frequency analysis; Vectors; Pinched hysteresis loop; quasi-ideal memory system; self-crossing; slope of tangent line;
  • fLanguage
    English
  • Journal_Title
    Cybernetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    2168-2267
  • Type

    jour

  • DOI
    10.1109/TCYB.2014.2350977
  • Filename
    6891296