DocumentCode
54731
Title
Quasi-Ideal Memory System
Author
Junwei Sun ; Yi Shen
Author_Institution
Sch. of Autom., Huazhong Univ. of Sci. & Technol., Wuhan, China
Volume
45
Issue
7
fYear
2015
fDate
Jul-15
Firstpage
1353
Lastpage
1362
Abstract
The definition for ideal memory system is so strict that some physical elements cannot exist in the real world. In this paper, an ideal memory system can be extended to generate 15 different kinds of quasi-ideal memory systems, which are included in memory systems as its special cases and are different from ideal memory system. For a system to be a quasi-ideal memory system, it should show three unique fingerprints: 1) the pinched hysteretic loop of a quasi-ideal memory system must be odd symmetrical in the plane; 2) the pinched hysteretic loop of a quasi-ideal memory system must be “self-crossing”; and 3) the slope of tangent line for the pinched hysteresis loop must be strictly monotone in a given period.
Keywords
hysteresis; memristors; memristor; physical elements; pinched hysteretic loop; quasiideal memory system; Educational institutions; Equations; Hysteresis; Mathematical model; Memristors; Time-frequency analysis; Vectors; Pinched hysteresis loop; quasi-ideal memory system; self-crossing; slope of tangent line;
fLanguage
English
Journal_Title
Cybernetics, IEEE Transactions on
Publisher
ieee
ISSN
2168-2267
Type
jour
DOI
10.1109/TCYB.2014.2350977
Filename
6891296
Link To Document