A fully integrated CMOS low noise amplifier for IEEE 802.11a standard applications

Author

Pourmand, Adel ; Aghdam, Esmaeil Najafi ; Zahedi, A.

Author_Institution

Dept. of Electr. Eng., Sahand Univ. of Technol., Tabriz, Iran

fYear

2011

fDate

17-19 May 2011

Firstpage

1

Lastpage

1

Abstract

In this paper, a fully integrated CMOS low noise amplifier (LNA) with on-chip spiral inductors in 0.18μm CMOS technology for IEEE 802.11a applications is presented. Using cascode topology and modified input impedance network as well as inductor neutralization technique, the LNA power dissipation is lowered to 16mW while having power gain of 17.82dB and reverse isolation factor of -58.37dB at centre frequency of 5.5GHz. S₁₁ and S₂₂ are equal to -16.1dB and -32dB, respectively. Designed LNA has IIP3 of +3dBm and less than 2.9dB noise figure (NF) in working band width, as resulted from transistor level simulation using TSMC RF CMOS 0.18 μm design kit.

Keywords

CMOS analogue integrated circuits; IEEE standards; inductors; low noise amplifiers; microwave amplifiers; wireless LAN; IEEE 802.11a standard application; TSMC RF CMOS design kit; cascode topology; frequency 5.5 GHz; gain -16.1 dB; gain -32 dB; gain -58.37 dB; gain 17.82 dB; inductor neutralization technique; integrated CMOS low noise amplifier; integrated LNA; modified input impedance network; on-chip spiral inductor; power 16 mW; power dissipation; reverse isolation factor; size 0.18 mum; transistor level simulation; Low noise amplifier; RF CMOS LNA; RF front-end; Ultra Wide Band (UWB); inductive neutralization;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering (ICEE), 2011 19th Iranian Conference on

Conference_Location

Tehran

Print_ISBN

978-1-4577-0730-8

Type

conf

Filename

5955894