A numerical study on base geometry of transistor laser: Quantum-well location effect

Author

Taghavi, Iman ; Kaatuzian, Hassan

Author_Institution

Electr. Eng. Dept., Amirkabir Univ. of Technol., Tehran, Iran

fYear

2011

fDate

17-19 May 2011

Firstpage

1

Lastpage

1

Abstract

We report a numerical method based on both experimental data and physical model to simulate quantum-well dislocation effect inside the base region of a transistor laser of 150μm cavity length. Utilizing a special calculation method, base recombination lifetime is simulated for different quantum-well locations. In order to investigate optical bandwidth dependence on quantum well location coupled carrier photon equations are analyzed. Simulation shows significant enhancement in optical bandwidth (up to ~51GHz) due to moving the quantum well toward collector while current gain decreases. Also reported in this work is an optimum place for quantum-well to locate in the base region in order to maximize the bandwidth.

Keywords

heterojunction bipolar transistors; numerical analysis; quantum well lasers; base recombination lifetime; current gain; numerical method; optical bandwidth; quantum well location coupled carrier photon equation; quantum-well dislocation effect; size 150 mum; transistor laser base geometry; Base Recombination Lifetime; Heterojunction Bipolar Transistor; Optical frequency response; Quantum-Well; Transistor Laser;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering (ICEE), 2011 19th Iranian Conference on

Conference_Location

Tehran

Print_ISBN

978-1-4577-0730-8

Type

conf

Filename

5955902