• DocumentCode
    548092
  • Title

    FDLTD method for the physical simulationof microwave FET transistor

  • Author

    Mirzavand, Rashid ; Abdipour, Abdolali ; Moradi, Gholamreza ; Movahhedi, Masoud

  • Author_Institution
    Amirkabir University of Technology
  • fYear
    2011
  • fDate
    17-19 May 2011
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Summary from only given. This paper describes an application of weighted Laguerre polynomial functions to produce a new unconditionally stable Finite-Difference Laguerre-Time-domain (FDLTD) scheme for simulation of the Drift-Diffusion Model (DDM) of semiconductor devices. The unconditionally stability of FDLTD method leads to a significant reduction in the simulation time. For example, when 100 weighted Laguerre polynomial functions is used, FDLTD is 5 times faster than conventional FDTD method while they have the same degree of accuracy.
  • Keywords
    Drift-Diffusion Model; Semiconductor Device; finite-difference Laguerre time-domain (FDLTD);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Engineering (ICEE), 2011 19th Iranian Conference on
  • Conference_Location
    Tehran
  • Print_ISBN
    978-1-4577-0730-8
  • Type

    conf

  • Filename
    5955983
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=548092