Diagnostic of microplasma reactor for scanning plasma etching

We report electrical properties and Optical Emission Spectrum of DC-Driven Microplasma Reactor for Scanning Plasma Etching in pure SF₆ environment with different device size between 5-12 kPa gas pressures. The Microplasma Reactor is consists of metal-insulator-metal sandwich structure, and with an inverted pyramidal shape hollow cathode. A diagnostic system is design to measure the V-I curve and OES (optical emission spectrum) of the microplasma. The result shows that the discharge current is increased with the gas pressure and applied voltage, the density of the active silicon etchant F atom emission spectrum line is increased with the decrease of the device size. These results confirm that the Microplasma Reactor is suitable for Scanning Plasma Etching of silicon.