DocumentCode
549291
Title
Low-cost 25Gb/s 1300nm electroabsorption-modulated InGaAlAs RW-DFB-laser
Author
Moehrle, Martin ; Przyrembel, Georges ; Bornholdt, Carsten ; Sigmund, Ariane ; Molzow, Wolf-Dietrich ; Klein, Holger
Author_Institution
Fraunhofer Inst. for Telecommun., Heinrich-Hertz-Inst., Berlin, Germany
fYear
2011
fDate
22-26 May 2011
Firstpage
1
Lastpage
4
Abstract
1300nm EMLs have been realized using an identical InGaAlAs MQW layer stack for the DFB and the EAM section and thus allowing for low fabrication costs. The devices show excellent 25Gb/s and 40Gb/s modulation performance at 50°C and are therefore well suited to be used in 4×25Gb/s systems.
Keywords
III-V semiconductors; aluminium compounds; distributed feedback lasers; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; optical fabrication; quantum well lasers; InGaAlAs; MQW layer; bit rate 25 Gbit/s; bit rate 40 Gbit/s; electroabsorption-modulated RW-DFB-laser; modulation performance; multiple quantum wells; temperature 50 degC; wavelength 1300 nm; Current measurement; Indium phosphide; Modulation; Optical variables measurement; Quantum well devices; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location
Berlin
Print_ISBN
978-1-4577-1753-6
Electronic_ISBN
978-3-8007-3356-9
Type
conf
Filename
5978286
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