Passivation of InGaAs/InAlAs/InP HEMTs using Al2O3 atomic layer deposition

Author

Schleeh, J. ; Halonen, J. ; Nilsson, B. ; Nilsson, P. Å ; Zeng, L.J. ; Ramvall, P. ; Wadefalk, N. ; Zirath, H. ; Olsson, E. ; Grahn, J.

Author_Institution

Dept. of Microtechnol. & Nanosci. (MC2), Chalmers Univ. of Technol., Göteborg, Sweden

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

4

Abstract

InGaAs/InAlAs/InP HEMTs (InP HEMTs) passivated by Al₂O₃ atomic layer deposition (ALD) demonstrated improved DC performance compared to Si₃N₄ plasma enhanced chemical vapour deposition (PECVD). DC measurements have been performed on 130 nm gate-length devices before and after passivation. An increase in maximum drain current density of 20% and extrinsic transconductance of 30% were observed after both ALD and PECVD device passivation. In comparison to PECVD passivated InP HEMTs, ALD passivated devices demonstrated a full suppression of a kink in the I-V characteristics associated with surface traps.

Keywords

III-V semiconductors; aluminium compounds; atomic layer deposition; gallium arsenide; high electron mobility transistors; indium compounds; passivation; plasma CVD; Al₂O₃; DC performance; HEMT; InGaAs-InAlAs-InP; atomic layer deposition; extrinsic transconductance; gate-length devices; maximum drain current density; passivation; plasma enhanced chemical vapour deposition; size 130 nm; surface trap; Aluminum oxide; Atomic layer deposition; HEMTs; Indium phosphide; Logic gates; MODFETs; Passivation;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials

Conference_Location

Berlin

Print_ISBN

978-1-4577-1753-6

Electronic_ISBN

978-3-8007-3356-9

Type

conf

Filename

5978306