DocumentCode
549319
Title
Photoluminescence peak wavelength behavior of InAs/InGaAsP/InP quantum dots structure
Author
Fukuda, Ayako ; Esaki, Miyuki ; Akimoto, Mio ; Imai, Hajime
Author_Institution
Fac. of Sci., Japan Women´´s Univ., Tokyo, Japan
fYear
2011
fDate
22-26 May 2011
Firstpage
1
Lastpage
4
Abstract
We measured the photoluminescence (PL) spectra of InAs/InGaAsP/InP quantum dots (QD) structures. We examined the relationship between the sample temperature and PL peak wavelength. The polarization of the excitation light was changed from the TM mode to the TE mode. We compared relations of a shift of the PL peak wavelength to the excitation light power under TM mode and TE mode excitation. We considered that the phenomenon like the band filling effect is larger for TE mode.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum dots; InAs-InGaAsP-InP; TE mode; TM mode; band filling effect; excitation light polarization; photoluminescence spectra; quantum dot structure; Filling; Indium phosphide; Photoluminescence; Quantum dots; Temperature measurement; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location
Berlin
Print_ISBN
978-1-4577-1753-6
Electronic_ISBN
978-3-8007-3356-9
Type
conf
Filename
5978318
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