Structural evaluation of GaAs1−xBix mixed crystals by TEM

Author

Ueda, Osamu ; Tominaga, Yoriko ; Ikenaga, Noriaki ; Yoshimoto, Masahiro ; Oe, Kunishige

Author_Institution

Kanazawa Inst. of Technol., Tokyo, Japan

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

4

Abstract

GaAs_1-xBi_x/GaAs multiple quantum well (MQW) structures and GaAs_1-xBi_x thin films (x <; 0.109) grown on (001) GaAs substrates by molecular beam epitaxy have been structurally evaluated by transmission electron microscopy. In both cases, grown-in defects such as dislocations, dislocation loops, and precipitates, composition modulated structure, and ordered structure were not observed all. From these results, it is expected that these materials are very promising for achieving high performance of MQW lasers emitting in the long wavelength range.

Keywords

III-V semiconductors; dislocation loops; gallium arsenide; molecular beam epitaxial growth; semiconductor growth; semiconductor quantum wells; semiconductor thin films; transmission electron microscopy; GaAs; GaAs_1-xBi_x-GaAs; TEM; composition modulated structure; dislocation loops; grown-in defects; molecular beam epitaxy; multiple quantum well laser emitters; multiple quantum well structures; precipitates; structural properties; thin films; transmission electron microscopy; Crystals; Gallium arsenide; Indium phosphide; Quantum well devices; Reflection; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials

Conference_Location

Berlin

Print_ISBN

978-1-4577-1753-6

Electronic_ISBN

978-3-8007-3356-9

Type

conf

Filename

5978324