Proposal and numerical analysis of ultra-fast optical logic devices with integrated InAs QD-SOA and ring resonators

Author

Matsumoto, Akiyoshi ; Kuwata, K. ; Akahane, K. ; Utaka, K.

Author_Institution

Fac. of Sci. & Eng., Waseda Univ., Tokyo, Japan

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

4

Abstract

We analytically investigate the dynamic behaviors of the proposed optical XNOR and AND logic gate devices, with an monolithically integrated highly stacked InAs quantum dots structure SOA fabricated with the strain compensation technique and ring resonators. The calculated results indicate that the optical logic device can operate the logic gate functions at 160Gb/s RZ signals with large eye opening, the value of which is estimated to be 90.3%, as compared to the bulk-type SOA. And we show the potential of this device for routing signal processing in ultra-fast photonic network system.

Keywords

III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; integrated optics; integrated optoelectronics; laser cavity resonators; logic gates; optical communication equipment; optical fabrication; optical logic; semiconductor optical amplifiers; semiconductor quantum dots; InGaAsP-InP; RZ signals; bit rate 160 Gbit/s; integrated QD-SOA; integrated ring resonators; monolithically integrated quantum dots; numerical analysis; optical AND logic gate devices; optical XNOR gate; optical fabrication; routing signal processing; strain compensation; ultrafast optical logic devices; ultrafast photonic network system; Facsimile; Logic gates; Optical distortion; Optical ring resonators; Optical saturation; Photonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials

Conference_Location

Berlin

Print_ISBN

978-1-4577-1753-6

Electronic_ISBN

978-3-8007-3356-9

Type

conf

Filename

5978343