Structural characterisation of GaP/Si nanolayers

Growth of GaP (III-V semiconductor) directly deposited on Si has been proposed to overcome the problems of lattice mismatch, in the context of monolithic integration of photonics on silicon. However, long-term stable device performance implies reproducible achievement of defect-free interfaces between III-V and Si. Among them, antiphase domains (APD) and microtwins (MT) are quite difficult to avoid. And characterization means sensitive to these defects must employed for optimization of the growth process and qualification of the grown layers. Lab setup and synchrotron XRD is combined with TEM and AFM observations.