• DocumentCode
    549356
  • Title

    Waveguide AlInAs/GaInAs APD for 40Gb/s optical receivers

  • Author

    Lahrichi, M. ; Glastre, G. ; Paret, J-F ; Carpentier, D. ; Lanteri, D. ; Lagay, N. ; Decobert, J. ; Achouche, M.

  • Author_Institution
    III-V Lab., Alcatel-Thales, Marcoussis, France
  • fYear
    2011
  • fDate
    22-26 May 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We show an evanescent waveguide coupling AlInAs/InGaAs SAGM APD using a short multimode waveguide for 40Gb/s optical transmission. Very thin avalanche and absorption layers together with a well optimized diluted waveguide allow achieving simultaneously a broad bandwidth (>; 26GHz for multiplication factors up to M=7-8) and a high responsivity of Rmax = 13.4 A/W at 1.55μm.
  • Keywords
    III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; integrated optics; optical couplers; optical receivers; optical waveguides; AlInAs-InGaAs; absorption layers; bit rate 40 Gbit/s; evanescent waveguide coupling; optical receivers; responsivity; separated absorption grading and multiplication; short multimode waveguide; wavelength 1.55 mum; Absorption; Avalanche photodiodes; Bandwidth; Couplings; Dark current; Frequency measurement; Optical waveguides;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
  • Conference_Location
    Berlin
  • Print_ISBN
    978-1-4577-1753-6
  • Electronic_ISBN
    978-3-8007-3356-9
  • Type

    conf

  • Filename
    5978360
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=549356