Lasing operation of long-wavelength transistor laser using AGaInAs/InP quantum well active region

Author

Shirao, Mizuki ; Sato, Takashi ; Takino, Yuta ; Sato, Noriaki ; Nishiyama, Nobuhiko ; Arai, Shigehisa

Author_Institution

Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

4

Abstract

A room-temperature continuous-wave operation of a 1.3 μm wavelength transistor laser (TL) with p/n/p configuration was achieved using AlGaInAs/InP 5 quantum-well active region A threshold current (emitter current) of 17 mA was obtained for a stripe width of 1.8 μm and a cavity length of 500 μm, and it was controlled by the collector-base voltage. Even though the current gain was only 0.01, three terminal operation was demonstrated and it can be improved by introducing n/p/n-TLs.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser cavity resonators; quantum well lasers; AlGaInAs-InP; collector-base voltage; continuous-wave lasing operation; emitter current; laser cavity length; long-wavelength transistor laser; quantum well active region; size 1.8 mum; size 500 mum; temperature 293 K to 298 K; Indium phosphide; Modulation; Power generation; Quantum well lasers; Transistors; AlGaInAs/InP; Buried-Heterostructure; Laser; OMVPE; Transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials

Conference_Location

Berlin

Print_ISBN

978-1-4577-1753-6

Electronic_ISBN

978-3-8007-3356-9

Type

conf

Filename

5978373