InP HBTs for THz frequency integrated circuits

Author

Urteaga, M. ; Seo, M. ; Hacker, J. ; Griffith, Z. ; Young, A. ; Pierson, R. ; Rowell, P. ; Skalare, A. ; Jain, V. ; Lobisser, E. ; Rodwell, M.J.W.

Author_Institution

Teledyne Sci. Co., Thousand Oaks, CA, USA

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

4

Abstract

A 0.25μm InP DHBT process has been developed for THz frequency integrated circuits. A 0.25×4μm² HBT exhibits an extrapolated f_t/f_max of 430GHz/1.03THz at I_C=11mA, V_CE=1.8V. The transistors achieve this performance while maintaining a common-emitter breakdown voltage (BV_CEO)>;4V. Thin-film interconnects and backside wafer processes have been developed to support selected IC demonstrations. The technology has been used to build fundamental oscillators, amplifiers and dynamic frequency dividers all operating at >;300GHz. Additionally, increasingly complex circuits such as a full PLL have been demonstrated.

Keywords

III-V semiconductors; heterojunction bipolar transistors; indium compounds; integrated circuit interconnections; phase locked loops; semiconductor device breakdown; semiconductor thin films; submillimetre wave integrated circuits; HBT; InP; PLL; THz frequency integrated circuits; backside wafer processes; common-emitter breakdown voltage; size 0.25 mum; thin-film interconnects; Current measurement; Heterojunction bipolar transistors; Indium phosphide; Integrated circuits; Semiconductor device measurement; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials

Conference_Location

Berlin

Print_ISBN

978-1-4577-1753-6

Electronic_ISBN

978-3-8007-3356-9

Type

conf

Filename

5978382