Integration of III/V lattice-matched on (001) Silicon for optoelectronic

Author

Kunert, Bernardette ; Volz, Kerstin ; Stolz, Wolfgang

Author_Institution

NAsP III/V GmbH, Germany

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

2

Abstract

GaP based compound material systems allow for the lattice matched integration on (001) Silic on substrate. In particular the novel dilute nitride Ga(NAsP), which reveals a direct band gap, enables the defect-free monolithic growth of a III/V laser material on Si. This lattice matched approach offers the possibility for a high-quality, low defect density integration of a III/V laser diode potentially leading to long-term stable laser devices. The present paper introduces this novel integration concept and discusses the challenges and opportunities of the process transfer from 2 inch Si wafer towards 300 mm wafer size.

Keywords

III-V semiconductors; arsenic compounds; energy gap; gallium compounds; integrated optics; integrated optoelectronics; laser stability; optical fabrication; semiconductor lasers; (001) silicon substrate; Ga(NAsP); III-V laser material; Si; defect-free monolithic growth; dilute nitride; direct band gap; lattice matched integration; long-term stable laser devices; size 2 inch; size 300 mm; Indium phosphide;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials

Conference_Location

Berlin

Print_ISBN

978-1-4577-1753-6

Electronic_ISBN

978-3-8007-3356-9

Type

conf

Filename

5978386