Title :
InP HBT technology activities in Europe
Author :
Konczykowska, Agnieszka
Author_Institution :
III-V Lab., Alcatel-Thales, Marcoussis, France
Abstract :
This overview presents activities in the field of InP HBT in Europe. In the first part, technological work of different groups with their particularities and recent results are presented. The second part is devoted to show some integrated circuit design and measurement results, illustrating application domains for which InP HBT process is particularly suitable.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; integrated circuit design; integrated circuit measurement; HBT; InP; integrated circuit design; DH-HEMTs; Europe; Heterojunction bipolar transistors; Indium phosphide; Optical variables measurement;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
