DocumentCode
549492
Title
Efficient SRAM failure rate prediction via Gibbs sampling
Author
Dong, Changdao ; Li, Xin
Author_Institution
Electr. & Comput. Eng. Dept., Carnegie Mellon Univ., Pittsburgh, PA, USA
fYear
2011
fDate
5-9 June 2011
Firstpage
200
Lastpage
205
Abstract
Statistical analysis of SRAM has emerged as a challenging issue because the failure rate of SRAM cells is extremely small. In this paper, we develop an efficient importance sampling algorithm to capture the rare failure event of SRAM cells. In particular, we adapt the Gibbs sampling technique from the statistics community to find the optimal probability distribution for importance sampling with minimum computational cost (i.e., a small number of transistor-level simulations). The proposed Gibbs sampling method applies an integrated optimization engine to adaptively explore the failure region by sampling a sequence of one-dimensional probability distributions. Several implementation issues such as one-dimensional random sampling and starting point selection are carefully studied to make the Gibbs sampling method efficient and accurate for SRAM failure rate prediction. Our experimental results of a commercial 65nm SRAM cell demonstrate that the proposed Gibbs sampling method achieves 3-10× runtime speed-up over other state-of-the-art techniques without surrendering any accuracy.
Keywords
SRAM chips; integrated circuit design; probability; statistical analysis; 1D random sampling; Gibbs sampling method; SRAM cell; SRAM cells; SRAM design; SRAM failure rate prediction; SRAM statistical analysis; integrated optimization engine; optimal probability distribution; starting point selection; statistics community; transistor-level simulations; Algorithm design and analysis; Gaussian distribution; Monte Carlo methods; Optimization; Random access memory; Random variables; Sampling methods; Integrated Circuit; Memory; Process Variation;
fLanguage
English
Publisher
ieee
Conference_Titel
Design Automation Conference (DAC), 2011 48th ACM/EDAC/IEEE
Conference_Location
New York, NY
ISSN
0738-100x
Print_ISBN
978-1-4503-0636-2
Type
conf
Filename
5981754
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