A novel low-voltage hot-carrier (LVHC) programming method for scaled NAND flash cell

Author

Tsai, Wen-Jer ; Tsai, P.H. ; Huang, J.S. ; Yan, S.G. ; Cheng, C.H. ; Cheng, C.C. ; Chen, Y.J. ; Lee, C.H. ; Hsu, M.C. ; Han, T.T. ; Lu, T.C. ; Chen, K.C. ; Lu, Chih-Yuan

Author_Institution

Macronix Int. Co., Ltd., Hsinchu, Taiwan

fYear

2011

fDate

14-16 June 2011

Firstpage

72

Lastpage

73

Abstract

A novel low-voltage, hot-carrier programming method for NAND flash cell is presented. By suitably controlling the NAND string´s conductance, a sufficient program current along with a high heating field is induced to cause efficient hot-carrier injection. Comprehensive studies on bias and timing effects are performed on 75nm-node floating-gate NAND cells. This programming method greatly alleviated the requirements for high-voltage supporting devices and their fabrication process, as the operating voltage can be less than 12V. Besides, it is less sensitive to process variation and possesses better reliability than conventional FN programming.

Keywords

NAND circuits; flash memories; hot carriers; integrated circuit reliability; NAND string conductance; bias effects; conventional FN programming; floating-gate cells; high heating field; high-voltage supporting devices; hot-carrier injection; low-voltage hot-carrier programming method; program current; scaled NAND flash cell; size 75 nm; timing effects; Flash memory; Heating; Hot carrier injection; Logic gates; Programming; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2011 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4244-9949-6

Type

conf

Filename

5984515