• DocumentCode
    549679
  • Title

    Critical discussion on (100) and (110) orientation dependent transport: nMOS planar and FinFET

  • Author

    Young, C.D. ; Baykan, M.O. ; Agrawal, A. ; Madan, H. ; Akarvardar, K. ; Hobbs, C. ; Ok, I. ; Taylor, W. ; Smith, C.E. ; Hussain, M.M. ; Nishida, T. ; Thompson, S. ; Majhi, P. ; Kirsch, P. ; Datta, S. ; Jammy, R.

  • Author_Institution
    SEMATECH, Albany, NY, USA
  • fYear
    2011
  • fDate
    14-16 June 2011
  • Firstpage
    18
  • Lastpage
    19
  • Abstract
    Electron mobility on (100) and (110) planar FETs and SOI FinFETs was evaluated. It is experimentally demonstrated that the (110) sidewall of FinFETs does not present a drawback in terms of electron mobility - contrary to results obtained on (110) planar MOSFETs. This is comprehensively explained by a combination of first principles and empirical approach closely matching the experimental data.
  • Keywords
    MOSFET; electron mobility; SOI FinFET; electron mobility; orientation dependent transport; planar MOSFET; Electron mobility; FinFETs; Logic gates; Phonons; Scattering; Strontium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2011 Symposium on
  • Conference_Location
    Honolulu, HI
  • ISSN
    0743-1562
  • Print_ISBN
    978-1-4244-9949-6
  • Type

    conf

  • Filename
    5984612
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=549679