High thermal robust ReRAM with a new method for suppressing read disturb

A thermal robust ReRAM (Resistive RAM) with a new method for suppressing read disturb was investigated. The switching property and `on´ resistance were scarcely varied by the operation temperature up to 200°C. Asymmetric structure such as Ru/TiO<sub>2</sub>/Ta<sub>2</sub>O<sub>5</sub>/TiO<sub>2</sub>/W showed `off´ switching only when a positive voltage was applied on the Ru electrode. The `reverse bias´ read operation, applying the positive voltage to the W electrode of asymmetric structure, could much improved the read disturb immunity. It was also confirmed that the ReRAM could be scaled keeping its resistive properties to 28-nm node. Additionally, low switching voltage less than 3 V, low `off´ switching current of 25μA, and high speed read less than 10 nsec were achieved simultaneously. These excellent properties are desirable for the automobile application.