Highly reliable 26nm 64Gb MLC E2NAND (Embedded-ECC & Enhanced-efficiency) flash memory with MSP (Memory Signal Processing) controller

Author

Shim, Hyunyoung ; Lee, Seaung-Suk ; Kim, Byungkook ; Lee, Namjae ; Kim, Doyoung ; Kim, Hankyum ; Ahn, Byungkeun ; Hwang, Youngho ; Lee, Hoseok ; Kim, Jumsoo ; Lee, Youngbok ; Lee, Heeyoul ; Lee, Juyeab ; Chang, Seungho ; Yang, Joongseob ; Park, Sungkye ;

Author_Institution

Flash Dev. Div., Hynix Semicond. Inc., Cheongju, South Korea

fYear

2011

fDate

14-16 June 2011

Firstpage

216

Lastpage

217

Abstract

A highly reliable 26nm 64GB MLC E2NAND (E2: Embedded-ECC & Enhanced-efficiency) flash memory has been successfully developed. To overcome scaling challenges, novel integration and operation technologies, such as 2-dummy word-line (WL) scheme, depletion suppressing process, hydrogen reducing process and Virtual Negative Read (VNR) scheme are introduced. And also, Memory Signal Processing (MSP) controller is used for enhancing performance and reliability. Finally, 5K cycling and 1 year data retention can be greatly achieved.

Keywords

NAND circuits; flash memories; integrated circuit reliability; 2-dummy WL scheme; 2-dummy word-line scheme; MLC E2NAND flash memory reliability; MSP controller; VNR scheme; data retention; depletion suppressing process; embedded-ECC-enhanced-efficiency flash memory; hydrogen reducing process; memory signal processing controller; memory size 64 GByte; size 26 nm; virtual negative read scheme; Couplings; Error correction codes; Flash memory; Logic gates; Reliability; Signal processing; Very large scale integration; E2NAND; MLC; MSP controller and reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2011 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4244-9949-6

Type

conf

Filename

5984639