DocumentCode
549751
Title
Comprehensive understanding of random telegraph noise with
Author
Higashi, Y. ; Momo, N. ; Momose, H.S. ; Ohguro, T. ; Matsuzawa, K.
Author_Institution
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
fYear
2011
fDate
14-16 June 2011
Firstpage
200
Lastpage
201
Abstract
Physical modeling of transient and frequency domain noise simulation for random telegraph noise (RTN) is conducted, considering discretized traps and energy transition in insulator. The models are implemented in a 3D device simulator to consider the device structure effect and bias effect universally. Trap density and trap distribution in insulator are predicted quantitatively with comparison of measured data and simulated data. In addition, we present negative pre-pulse effect for RTN reduction.
Keywords
frequency-domain analysis; insulators; integrated circuit modelling; integrated circuit reliability; random noise; transient analysis; 3D device simulator; RTN reduction; bias effect; device structure effect; discretized traps; energy transition; frequency domain noise simulation; insulator; physics-based simulation; random telegraph noise; transient noise simulation; trap density; trap distribution; Current measurement; Electron traps; Frequency domain analysis; Insulators; MOS devices; Mathematical model; Noise;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology (VLSIT), 2011 Symposium on
Conference_Location
Honolulu, HI
ISSN
0743-1562
Print_ISBN
978-1-4244-9949-6
Type
conf
Filename
5984705
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