Direct real-time observation of channel potential fluctuation correlated to random telegraph noise of drain current using nanowire MOSFETs with four-probe terminals

Author

Ohmori, K. ; Feng, W. ; Sato, S. ; Hettiarachchi, R. ; Sato, M. ; Matsuki, T. ; Kakushima, K. ; Iwai, H. ; Yamada, K.

Author_Institution

Grad. Sch. of Pure & Appl. Sci., Univ. of Tsukuba, Tsukuba, Japan

fYear

2011

fDate

14-16 June 2011

Firstpage

202

Lastpage

203

Abstract

We have successfully characterized the dynamical fluctuation of electrical potential due to random telegraph noise (RTN) using MOSFETs with extra terminals for potential sensing. Among some cases of potential changes, devices with clear response in the extra terminals were analyzed in detail. It was found RTN can cause the potential fluctuation in the entire channel region. The magnitude of the fluctuation was consistent with those due to Vg in static properties. These results demonstrate the direct observation of channel potential changes due to number fluctuation phenomena.

Keywords

MOSFET; fluctuations; nanowires; random noise; channel potential fluctuation; direct real-time observation; drain current; entire channel region; four-probe terminals; nanowire MOSFET; number fluctuation phenomena; random telegraph noise; Charge carrier processes; Correlation; Electric potential; Fluctuations; Logic gates; Noise; Sensitivity;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2011 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4244-9949-6

Type

conf

Filename

5984706