A 640×480 image sensor with unified pixel architecture for 2D/3D imaging in 0.11µm CMOS

A 3D image sensor is presented employing a time multiplexed concept for color and depth image acquisition in a single chip to generate a real-time 3D image of an arbitrary scene. The pixel adopts a split photodiode to demodulate time-of-flight signals effectively. Every four pixels share two storages and readout transistors to utilize 100% of photons and increase the sensitivity of infrared light by simple binning operation at the expense of resolution. With the fabricated prototype sensor, 640×480 color and depth images of the scenes 1-3m away are captured with an accuracy of 1-6cm.